晶体生长杂志 SCIE

期刊简介预计审稿时间： 约2.6个月 约10周

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

该期刊为从事晶体生长实验和理论方面研究及其应用（例如在设备中）的工作者提供了通用的参考和出版资源。以下领域的实验和理论贡献均已发表：成核和生长理论、分子动力学和传输现象、聚合物和玻璃等粘性介质中的结晶；金属、矿物、半导体、超导体、磁性材料、无机、有机和生物物质的块体或薄膜晶体生长；分子束外延、化学气相沉积、III-V 和 II-VI 以及其他半导体的生长；通过物理和化学方法表征单晶；晶体生长的装置、仪器和技术以及净化方法；多层异质结构及其表征，重点是电子材料的晶体生长和外延方面。该期刊的一大特色是定期收录有关晶体生长相关方面的研讨会和会议论文集。

《Journal Of Crystal Growth》(晶体生长杂志)编辑部通讯方式为ELSEVIER SCIENCE BV, PO BOX 211, AMSTERDAM, NETHERLANDS, 1000 AE。如果您需要协助投稿或润稿服务，您可以咨询我们的客服老师。我们专注于期刊投稿服务十年，熟悉发表政策，可为您提供一对一投稿指导，避免您在投稿时频繁碰壁，节省您的宝贵时间，有效提升发表机率，确保SCI检索（检索不了全额退款）。我们视信誉为生命，多方面确保文章安全保密，在任何情况下都不会泄露您的个人信息或稿件内容。